The G1N65R035TB-N is a hybrid normally-off Gallium Nitride (GaN) FET with the strongest gate and lowest reverse voltage drop of any wide bandgap device. They allow simple gate drives and provide best-in-class performance and excellent reliability.

Feature:

• Strong gate with a high threshold, no negative gate drive required, and high repetitive input voltage tolerance of ±20V.

• Fast turn-on/turn-off speed to reduce crossover loss.

• Low QG and simple gate drive for lowest driver consumption at high frequencies.

• Lowest off-state reverse conduction VF of all SiC and GaN FETs, enabling low losses during dead time.

• Low QRR for excellent hard-switching bridge applications.

• High spike tolerance of 800V improves reliability.

Benefit:

• Achieve the highest conversion efficiency.

• Enables higher frequencies for compact power supplies.

• End product cost and size savings due to reduced thermal budget.

• Improved safety and reliability due to cooler operating temperature.

Application:

• Half-bridge buck/boost, totem pole PFC circuit, or inverter circuit.

• High efficiency/high-frequency phase shift, LLC, or other switching topologies.