BSC014N04LS 40V product families feature the industry’s lowest R DS(on) and a perfect switching behavior for fast switching applications. In addition, 15% lower R DS(on) and 31% lower figure of merit (R _DS(on) * Q _g) compared to alternative devices have been realized by advanced thin wafer technology.

Product parameters:

Type designator: BSC014N04LS

Marking code: 014N04LS

Type of transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd): 2.5 W

Maximum drain-source voltage |Vds|: 40 V

Maximum gate-source voltage |Vgs|: 20 V

Maximum gate-threshold voltage |Vgs(th)|: 2 V

Maximum drain current |Id|: 32 A

Maximum junction temperature (Tj): 150 °C

Total gate charge (Qg): 31 nC

Rise time (tr): 9 nS

Drain-source capacitance (Cd): 1200 pF

Maximum drain-source on-state resistance (Rds): 0.0014 Ohm

Package: PG-TDSON-8