PSMN1R4-40YLD 40 V, 1.4 mΩ, 240 A, Logic Level Gate Drive N-Channel Enhancement Mode MOSFET in a 175 °C LFPAK56 package with advanced TrenchMOS Superjunction technology. This product is designed and compliant for high-performance power-switching applications.
Product features and advantages:
• 240 A capability
• Avalanche rating, 100% tested at IAS = 190 A
• NextPower-S3 technology provides "ultra-fast switchover and soft recovery"
• Low QRR, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body diode provides soft switching without the associated high IDSS leakage
• Optimized for 4.5 V gate drive with NextPower-S3 super junction technology
• High-reliability LFPAK (Power SO8) package, copper clips, solder lug connections, and 175 °C certified
• Exposed leads for wave soldering, visual solder joint inspection, and high quality solder joints
• Low parasitic inductance and resistance
Product applications:
• Synchronous rectification
• DC-DC converter
• High-performance, high-efficiency server power supplies
• motor control
• Power OR-ing

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